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首页> 外文期刊>Microwave Theory and Techniques, IEEE Transactions on >Improving the High-Frequency Performance of Coaxial-to-Microstrip Transitions
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Improving the High-Frequency Performance of Coaxial-to-Microstrip Transitions

机译:改善同轴到微带过渡的高频性能

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This paper presents a new design to improve the transmission characteristics of coaxial-to-microstrip transitions. A metallic ring is added to a conventional coaxial structure to serve as a buffer between a coaxial line and a microstrip line. The introduction of the metallic ring reduces the insertion loss of the transition caused by the sudden changes of the electromagnetic field distributions from one transmission line to another. This improvement is more prominent at higher frequencies; hence, the 1-dB transmission passband of the transition is increased significantly. A practical design example is implemented and measured. The increase of the 1-dB passband is more than 60%. The new design is also proven to be suitable for transitions between various coaxial cables/connectors and microstrip lines on different substrates or another commonly used planar transmission line, the coplanar waveguides. The robust nature of this design makes its performance not susceptible to the fabrication and assembly errors of the transitions. These characteristics qualify the proposed design as an excellent candidate for coaxial-to-microstrip transitions at higher frequencies.
机译:本文提出了一种新的设计,以改善同轴到微带过渡的传输特性。将金属环添加到常规的同轴结构中,以用作同轴线和微带线之间的缓冲。金属环的引入减少了由于电磁场分布从一条传输线到另一条传输线的突然变化而导致的过渡的插入损耗。这种改进在较高频率下更加突出;因此,过渡的1 dB传输通带显着增加。实施并测量了一个实际的设计实例。 1-dB通带的增加超过60%。事实证明,新设计适用于各种同轴电缆/连接器与不同基板上的微带线之间的过渡,或另一种常用的平面传输线(共面波导)之间的过渡。这种设计的鲁棒性使其性能不受过渡的制造和组装错误影响。这些特性使拟议的设计成为在较高频率下同轴到微带过渡的极佳选择。

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