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首页> 外文期刊>Microwave Theory and Techniques, IEEE Transactions on >CMOS-MEMS 3-bit Digital Capacitors With Tuning Ratios Greater Than 60:1
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CMOS-MEMS 3-bit Digital Capacitors With Tuning Ratios Greater Than 60:1

机译:调谐比大于60:1的CMOS-MEMS 3位数字电容器

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摘要

3-bit microelectromechanical systems digital capacitors with greater than 60:1 tuning ratios are monolithically integrated with CMOS using a post-CMOS fabrication process. The digital capacitors are composed of many switched capacitors in parallel, which use a combination of vertical (out-of-plane) electrothermal actuation and lateral (in-plane) electrostatic actuation to toggle their capacitance value. Measured results demonstrate quality factors greater than 150 at 1 GHz and electrical self-resonant frequencies beyond 10 GHz. The capacitors can be switched in less than 1 ms with 4 V for electrothermal actuation and 20 V for electrostatic actuation. The effects of repeated actuation are presented to assess the reliability of the digital capacitors.
机译:使用后CMOS制造工艺将具有大于60:1调谐比的3位微机电系统数字电容器与CMOS单片集成。数字电容器由许多并联的开关电容器组成,这些电容器使用垂直(平面外)电热致动和横向(平面内)静电致动的组合来切换其电容值。测量结果表明,在1 GHz下质量因子大于150,在10 GHz以上的电自谐振频率。可以在不到1 ms的时间内切换电容器,其中4 V用于电热致动,20 V用于静电致动。提出了重复驱动的效果,以评估数字电容器的可靠性。

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