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Wideband LNA Using Active Inductor With Multiple Feed-Forward Noise Reduction Paths

机译:具有多个前馈降噪路径的有源电感的宽带LNA

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摘要

In this paper, an area-efficient LNA with on-chip input matching circuit utilizing an active inductor is presented. The active inductor is implemented based on the gyrator structure and its noise is improved by employing a feed-forward path (FFP). The overall low-noise performance of the LNA is achieved by cancelling the inductor noise through an additional FFP. It is shown that the proposed LNA circuit is capable of achieving low-noise performance with wideband tuning at the input in a small die area. A 0.32- to 1-GHz LNA has been designed and fabricated in a standard 0.18-μm CMOS technology. The LNA occupies a die area of less than 0.1 mm2. The measured results show noise figure of 2.2-2.7 dB (2.2-2.4 dB for the UHF band), return loss of better than 10 dB (13 dB for the UHF band), and voltage gain of higher than 18 dB over the entire frequency band. The LNA draws 8.5 mA from a 1.8-V supply.
机译:本文提出了一种采用有源电感的具有片上输入匹配电路的低面积LNA。有源电感器基于回转器结构实现,并且通过采用前馈路径(FFP)改善了噪声。 LNA的总体低噪声性能是通过附加的FFP消除电感噪声来实现的。结果表明,所提出的LNA电路能够在小芯片面积的输入端实现宽带调谐,从而实现低噪声性能。 0.32至1 GHz LNA已采用标准的0.18μmCMOS技术进行设计和制造。 LNA的管芯面积小于0.1 mm 2 。测量结果显示噪声系数为2.2-2.7 dB(UHF频段为2.2-2.4 dB),回波损耗优于10 dB(UHF频段为13 dB),并且在整个频率上的电压增益均高于18 dB带。 LNA从1.8V电源汲取8.5mA电流。

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