首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A 2.7-mW 1.36–1.86-GHz LC-VCO With a FOM of 202 dBc/Hz Enabled by a 26%-Size-Reduced Nano-Particle-Magnetic-Enhanced Inductor
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A 2.7-mW 1.36–1.86-GHz LC-VCO With a FOM of 202 dBc/Hz Enabled by a 26%-Size-Reduced Nano-Particle-Magnetic-Enhanced Inductor

机译:2.7mW 1.36–1.86-GHz LC-VCO,FOM为202 dBc / Hz,通过减小26%尺寸的纳米颗粒磁增强电感器实现

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This paper reports the first LC voltage-controlled oscillator (LC-VCO) in CMOS utilizing a novel nontraditional compact inductor with integrated vertical nano particles magnetic core (Ni–Zn–Cu) to improve the figure-of-merit (FOM) of the VCO circuit. The new magnetic-enhanced inductor, fabricated in an integrated-circuit back-end using a CMOS-compatible process, improves inductance density ($L$-density) and quality factor ($Q$ -factor) up to 7 GHz. A 1.36–1.86-GHz VCO with a nano-ferrite-integrated inductor was fabricated in a 180-nm RF CMOS. Measurements show that the magnetic-cored inductor improves the $L$ -density and $Q$ -factor by 49.8% and 59.2% at 1.8 GHz, respectively, while reducing the size by 26%. The VCO achieves reduced power consumption of 2.7 mW at a 1.8-V supply, low phase noise of less than $-{hbox{121}}$, and $-{hbox{126 dBc/Hz}} $ at 100-kHz and 1-MHz frequencies offset, and a high FOM of 202 dBc/Hz. This prototype VCO demonstrates that the new vertical-nano-magnetic-cored inductor technology is a potential solution to high-performance low-cost compact RF systems-on-chip.
机译:本文报道了CMOS中的第一个LC压控振荡器(LC-VCO),它利用新型非传统紧凑型电感器和集成的垂直纳米颗粒磁芯(Ni-Zn-Cu)来改善半导体的品质因数(FOM)。 VCO电路。新型磁增强电感器采用CMOS兼容工艺在集成电路后端制造,可将电感密度($ L $-密度)和品质因数($ Q $ -factor)提高到7 GHz。在180nm RF CMOS中制造了具有纳米铁氧体集成电感器的1.36–1.86-GHz VCO。测量表明,在1.8 GHz频率下,磁芯电感器的$ L $密度和$ Q $因子分别提高了49.8%和59.2%,而尺寸却减小了26%。 VCO在1.8V电源下可实现2.7 mW的功耗降低,在100 kHz时的低相位噪声低于$-{hbox {121}} $和$-{hbox {126 dBc / Hz}} $ 1 MHz频率偏移和202 dBc / Hz的高FOM。该原型VCO证明了新型垂直纳米磁芯电感器技术是高性能,低成本紧凑型RF片上系统的潜在解决方案。

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