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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Modeling of Input Nonlinearity and Waveform Engineered High-Efficiency Class-F Power Amplifiers
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Modeling of Input Nonlinearity and Waveform Engineered High-Efficiency Class-F Power Amplifiers

机译:输入非线性和波形设计的建模高效Class-F功率放大器

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摘要

A comprehensive time-domain modeling and a generalized design methodology for input and output waveform engineered Class-F power amplifiers (PAs) are presented in this article. A closed-form relationship between input nonlinearity and second harmonic source impedance (Z(2S)) termination is presented from which efficiency and output power performance are predicted for Class-F PAs. The maximum, minimum, and safe Z(2S) design space for a Class-F PA are identified. Moreover, the derived design equations show that the typical fundamental load of a Class-F PA operation must be re-engineered in the presence of input nonlinearity in order to achieve optimum efficiency performance. The theoretical analyses are first validated with pulsed vector load-pull (VLP) measurements with a gallium nitride (GaN) 2 mm device. Then, high-power (210 W) GaN 24-mm devices with in-package Z(2S) terminations are implemented. Measurement results with the new source and load design space show efficiency improvement of 4.4% compared to the nominal Class-F PA.
机译:本文提出了一种全面的时域建模和用于输入和输出波形的广义设计方法,用于Class-F功率放大器(PAS)。输入非线性和二次谐波源阻抗(Z(2S))终止之间的闭合形式关系,从该效率和输出功率性能预测到F类PAS。识别C类PA的最大,最小和安全Z(2S)设计空间。此外,衍生的设计方程表明,必须在输入非线性存在下重新设计C类操作的典型基本负载,以实现最佳效率性能。首先用氮化镓(GaN)2mM装置用脉冲向量负载 - 拉(VLP)测量来验证理论分析。然后,实现了具有封装Z(2S)终端的高功率(210 W)GaN 24-MM器件。与标称类F PA相比,新来源和负荷设计空间的测量结果显示为4.4%的效率提高。

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