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A Multifixture Full-Wave De-Embedding Method for Characterizing One-Port Devices

机译:一种表征单端口设备的多夹具全波去嵌入方法

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Full-wave de-embedding refers to a network de-embedding technique in which the fixture effects are removed by characterizing any connection interface using a full-wave EM simulation method instead of by measurement alone. This technique is able to achieve consistent definition of equivalent circuit voltage and current when the de-embedded results are used for EM/circuit cosimulation. Adopting this approach, we describe an improved full-wave de-embedding method for characterizing one-port devices, where multiple redundant fixtures with mutually complementary properties are used to minimize the effects of random errors. Based on a linearized error model, the proposed method is able to improve the de-embedding accuracy over a broad frequency range, particularly when the device under test is reconfigurable. The proposed method is verified through the de-embedding of a surface-mount p-i-n diode, for which numerical and experimental results are provided. We also compare our technique with the thru-reflect-line method, and the results show that full-wave de-embedding can be more reliable in developing device models for accurate EM/circuit cosimulation purposes.
机译:全波去嵌入是指一种网络去嵌入技术,其中通过使用全波EM仿真方法而不是仅通过测量来表征任何连接接口来消除灯具效果。当将去嵌入结果用于EM /电路协同仿真时,该技术能够实现等效电路电压和电流的一致定义。采用这种方法,我们描述了一种用于表征单端口设备的改进的全波去嵌入方法,其中使用了具有互为互补特性的多个冗余夹具来最大程度地减少随机误差的影响。基于线性误差模型,该方法能够在较宽的频率范围内提高去嵌入精度,尤其是在可重新配置被测设备时。通过去嵌入表面安装的p-i-n二极管验证了该方法的有效性,并提供了数值和实验结果。我们还将我们的技术与直通反射线方法进行了比较,结果表明,在开发用于精确EM /电路协同仿真目的的器件模型时,全波去嵌入可以更可靠。

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