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High-Performance CMOS Power Amplifier With Improved Envelope Tracking Supply Modulator

机译:具有改进的包络跟踪电源调制器的高性能CMOS功率放大器

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A differential cascode CMOS power amplifier (PA) with a supply modulator for envelope tracking (ET) has been implemented using 0.18- RF CMOS technology. For maximizing the PA’s performance, the CMOS power cell has been optimized. The CMOS PA employs 2nd harmonic control circuits at the input, source, and output of the PA to improve efficiency and linearity at the same time. The CMOS PA utilizes an improved ET supply modulator, which is suitable for a CMOS PA with high knee voltage. By utilizing this modulator, we achieve not only higher linearity, but also higher efficiency in all power levels. For a long-term evolution signal at 1.70 GHz with a 10-MHz bandwidth and a 16-QAM 7.5-dB peak-to-average power ratio, the CMOS ET PA module achieves a power-added efficiency of 36.6%, an error vector magnitude of 3.0%, and an adjacent channel leakage ratio of at an average output power of 28.5 dBm. The proposed ET operation reduces the total current consumption over the standalone PA, by 10% at the peak power and up to 56% at a low power.
机译:使用0.18-RF CMOS技术实现了具有用于包络跟踪(ET)的电源调制器的差分共源共栅CMOS功率放大器(PA)。为了最大化PA的性能,对CMOS功率单元进行了优化。 CMOS PA在PA的输入,源和输出处采用二次谐波控制电路,以同时提高效率和线性度。 CMOS PA利用改进的ET电源调制器,适用于具有高拐点电压的CMOS PA。通过利用这种调制器,我们不仅在所有功率水平上都实现了更高的线性度,而且还实现了更高的效率。对于1.70 GHz,10 MHz带宽和16-QAM 7.5 dB峰均功率比的长期演进信号,CMOS ET PA模块可实现36.6%的功率附加效率,这是误差向量最大输出功率为3.0%,相邻信道泄漏比为28.5 dBm。拟议的ET操作可将独立PA上的总电流消耗降低,在峰值功率下降低10%,在低功率下最高降低56%。

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