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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Reconfigurable Dual-Band Bidirectional Reflection Amplifier With Applications in Van Atta Array
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Reconfigurable Dual-Band Bidirectional Reflection Amplifier With Applications in Van Atta Array

机译:可重构双频双向反射放大器及其在Van Atta阵列中的应用

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摘要

We designed a reconfigurable dual-band reflection amplifier with operation frequency bands over 1.8 GHz and/or 2.4 GHz. This one-port amplifier boosts the reflected signal over either of these two frequency bands or both as a dual-band reflection amplifier. The amplifier circuit consists of an FET transistor and two p-i-n diodes, which act as switches to form a reconfigurable system. The measured reflection gains at single 1.8 GHz and 2.4 GHz frequency bands are 17.6 dB and 16.75 dB, respectively. The dual-band operation frequency shows 11.2 dB and 15 dB gain at 1.8 GHz and 2.4 GHz, respectively. Then, we realized a bidirectional amplifier using a dual-band -3 dB 90° branch line coupler integrated with two of the proposed reconfigurable reflection amplifiers. This bidirectional amplifier is a two-port bilateral amplifier. The measured reflection gains show at least 10 dB transmission gains (S21 and S12) at operation frequency bands. The proposed reconfigurable bidirectional amplifier is then used in a dual-band Van Atta array. The proposed active retrodirective system outperformed passive Van Atta array by 5 dB gain with only half the number of antenna elements. Each component is investigated analytically and analyzed by advanced design system. Fabricated circuits are measured and show good agreement with simulations.
机译:我们设计了一种可重新配置的双频带反射放大器,其工作频带超过1.8 GHz和/或2.4 GHz。这个单端口放大器在两个频段中的一个或两个上都增强了反射信号,作为双频段反射放大器。放大电路由一个FET晶体管和两个p-i-n二极管组成,它们用作开关以形成可重配置的系统。在单个1.8 GHz和2.4 GHz频带上测得的反射增益分别为17.6 dB和16.75 dB。双频工作频率在1.8 GHz和2.4 GHz处分别显示11.2 dB和15 dB的增益。然后,我们实现了一个双向放大器,该放大器使用了与两个建议的可重构反射放大器集成在一起的双频带-3 dB 90°支路耦合器。该双向放大器是一个两端口双向放大器。测得的反射增益显示在工作频带上至少有10 dB的传输增益(S 21 和S 12 )。所提出的可重构双向放大器随后用于双频Van Atta阵列中。所提出的有源逆向系统在仅天线元件数量的一半的情况下,就比无源Van Atta阵列的性能提高了5 dB。通过高级设计系统对每个组件进行分析和分析。测量预制电路,并显示出与仿真的良好一致性。

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