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Single-/Dual-Band Bandpass Filter-Integrated Single-Pole Double-Throw Switch Using Distributed Coupling Tri-Mode Resonators

机译:使用分布式耦合三模谐振器的单/双频带带通滤波器集成单极双掷开关

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This article presents a method to design a single-band (SB)/dual-band (DB) bandpass filter (BPF)-integrated single-pole double-throw (SPDT) switch by using one/two distributed coupling identical tri-mode resonator (TMR) pairs loaded with opposite polarity p-i-n diodes. Moreover, the proposed method is also directly suitable for designing the multiple-band (MB) BPF-integrated SPDT switch by simply increasing the used numbers of identical TMR pairs. As an example, a SB-BPF-integrated SPDT switch with the central frequency (CF) of 1 GHz and the ripple bandwidth (RBW) of 65 MHz is first designed by using one identical switchable TMR pair, so as to validate our design approach. Due to the inherent property of TMR and the introduced source-load coupling, high ON-state passband selectivity is achieved. Then, two switched 50- $Omega $ matching circuits are connected to two noncommon feeding lines, and an SB-BPF-integrated SPDT switch with absorptive OFF-state property is also realized. Finally, a DB-BPF-integrated SPDT switch with CFs of 0.9 GHz/1.8 GHz and RBWs of 50 MHz/105 MHz is designed by simply employing two identical TMR pairs. When the operating states of two identical switchable TMR pairs are specifically chosen, the proposed DB-BPF-integrated SPDT switch exhibits multiple functions, i.e., the 900/1800 SB-BPF-integrated SPDT switches with absorptive OFF-state property, the 900/1800 DB-BPF-integrated SPDT switch with absorptive OFF-state property, and the 900/1800 diplexer-integrated SPDT switch. The measured results also show that these switches exhibit low ON-state passband losses, deep out-of-band rejections (OBRs) of ON-state passbands, high OFF-state suppressions (OSSs), high port-to-port isolations (PPIs), and compact circuit sizes.
机译:本文提出了一种通过使用一个/两个分布式耦合相同的三模式谐振器来设计单带(SB)/双带(DB)带通滤波器(BPF)集成的单刀双掷(SPDT)开关的方法(TMR)对装有相反极性的引脚二极管。而且,通过简单地增加相同的TMR对的使用数量,所提出的方法也直接适合于设计多频带(MB)BPF集成的SPDT开关。例如,首先通过使用一对相同的可切换TMR对设计具有1 GHz中心频率(CF)和65 MHz纹波带宽(RBW)的SB-BPF集成SPDT开关,以验证我们的设计方法。由于TMR的固有特性和引入的源极-负载耦合,可以实现高导通状态通带选择性。然后,将两个50-Ω的开关匹配电路连接到两条非公共馈线,并且还实现了具有吸收性OFF-OFF特性的集成SB-BPF的SPDT开关。最后,只需使用两个相同的TMR对,即可设计出具有0.9 GHz / 1.8 GHz CF和50 MHz / 105 MHz RBW的集成DB-BPF的SPDT开关。当特别选择两个相同的可切换TMR对的工作状态时,建议的集成DB-BPF的SPDT开关具有多种功能,即具有吸收性OFF-State特性的900/1800 SB-BPF集成的SPDT开关,900 /具有吸收性OFF状态的1800 DB-BPF集成SPDT开关,以及900/1800双工器集成SPDT开关。测量结果还表明,这些开关表现出低的通态通带损耗,通态通带的深带外抑制(OBR),高通态抑制(OSS),高端口到端口隔离(PPI) ),并且电路尺寸紧凑。

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