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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >A 6–18-GHz Switchless Reconfigurable Dual-Band Dual-Mode PA MMIC Using Coupled-Line-Based Diplexer
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A 6–18-GHz Switchless Reconfigurable Dual-Band Dual-Mode PA MMIC Using Coupled-Line-Based Diplexer

机译:使用基于耦合线的双工器的6–18GHz无开关可重配置双频双模PA MMIC

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摘要

In this paper, a switchless dual-band, dual-mode power amplifier (PA) has been developed for multioctave operation. For the switchless dual-band operation, we proposed a new coupled-line-based diplexer structure. The proposed diplexer operates as a balun at high-band frequencies and the coupled line at low-band frequencies. To better understand the proposed diplexer structure, a detailed analysis is performed based on a coupled-line theory. The interstage and output-stage matching networks of the PA are designed by using the proposed diplexer. To maximize the power-added efficiency (PAE) of the designed PA, turn off the unused band PAs and decide the optimum off-state bias condition of transistors. The designed dual-band, dual-mode PA is fabricated with commercial 0.25-$mu ext{m}$GaN HEMT process. The fabricated PA shows over 15-dB small-signal gain at 5–11 GHz in the low-band mode and 9–18 GHz in the high-band mode. The measured average output power and PAE are 35 dBm, 23% in the low-band mode and 37 dBm, 26% in the high-band mode.
机译:本文针对无倍频程工作开发了无开关双频,双模式功率放大器(PA)。对于无开关双频操作,我们提出了一种新的基于耦合线的双工器结构。所提出的双工器在高频带频率下用作平衡-不平衡变换器,在低频带频率下用作耦合线。为了更好地理解所提出的双工器结构,基于耦合线理论进行了详细的分析。使用提出的双工器设计了功率放大器的级间和输出级匹配网络。为了使设计的PA的功率附加效率(PAE)最大化,请关闭未使用的频带PA并确定晶体管的最佳关断状态偏置条件。设计的双频,双模功率放大器采用商用0.25- n $ mu text {m} $ nGaN HEMT工艺。伪造的功率放大器在低频段模式下在5-11 GHz处以及在高频段模式下在9-18 GHz处显示出超过15dB的小信号增益。测得的平均输出功率和PAE在低频带模式下为35 dBm,23%,而在高频带模式下为37 dBm,26%。

著录项

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  • 作者单位

    Department of Electrical and Computer Engineering, Institute of New Media and Communications, Seoul National University, Seoul, South Korea;

    Department of Electrical and Computer Engineering, Institute of New Media and Communications, Seoul National University, Seoul, South Korea;

    Division of Electrical Engineering, Hanyang University, Seoul, South Korea;

    Division of Electrical Engineering, Hanyang University, Seoul, South Korea;

    Department of Electrical and Computer Engineering, Institute of New Media and Communications, Seoul National University, Seoul, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Impedance; Resistance; Dual band; Transistors; Switches; Microwave transistors;

    机译:阻抗;电阻;双频段;晶体管;开关;微波晶体管;

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