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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >An Analytical Design Method for High-Speed VCSEL Driver With Optimized Energy Efficiency
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An Analytical Design Method for High-Speed VCSEL Driver With Optimized Energy Efficiency

机译:具有优化能效的高速VCSEL驱动器的分析设计方法

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摘要

A universal analytical design approach for laser diode drivers (LDDs) is presented and verified. All design parameters are derived analytically, taking the vertical-cavity surface-emitting laser (VCSEL) characteristics into account. Two optimization strategies are proposed. First, the power consumption is minimized for the highest achievable optical modulation amplitude (OMA) and extinction ratio (ER). Second, the highest achievable data rate (DR) is considered to maximize the energy efficiency. As a result, a simple differential amplifier can be implemented as an LDD to achieve energy efficiencies and DRs comparable or even higher than the one of more complex designs utilizing preemphasis, feedforward equalization, and pulse amplitude modulation. Therefore, drivers designed with this holistic analytical approach accommodate well the demands for high DRs, high energy efficiency, high compactness, high reliability, and low latency in future optical data links. A compact LDD is designed with an active area of onlyn$0.15 times 0.12$nmmn2nin a 130-nm SiGe BiCMOS technology. A DR of 40 Gbit/s with bit error ratesn$< 10^{-13}$nand an energy efficiency of 2.245 pJ/bit are achieved for an OMA of 1.1 mW and an ER of 10 dB using a 20-GHz 850-nm common-cathode VCSEL. The achieved values deviate less than 10% from the predicted ones, which clearly illustrates the effectiveness of the presented analytical approach. Further improvements are achieved by optimizing the modulation levels and the performance to the link requirements. At 45 and 30 Gbit/s, 1.8 and 1.17 pJ/bit are achieved, respectively.
机译:提出并验证了激光二极管驱动器(LDD)的通用分析设计方法。考虑到垂直腔面发射激光器(VCSEL)的特性,所有设计参数都是通过解析得出的。提出了两种优化策略。首先,对于最大可实现的光调制幅度(OMA)和消光比(ER),功耗被最小化。其次,最高可达到的数据速率(DR)被认为可以最大程度地提高能效。结果,可以将简单的差分放大器实现为LDD,以实现与使用预加重,前馈均衡和脉冲幅度调制的更为复杂的设计相比甚至更高的能量效率和DR。因此,使用这种整体分析方法设计的驱动器很好地满足了未来光学数据链路中对高DR,高能效,高紧凑性,高可靠性和低延迟的需求。设计紧凑型LDD,其活动区域只有n $ 0.15乘以0.12 $ nmmn 2 n应用于130纳米SiGe BiCMOS技术中。误码率为40 Gbit / s的DR,n $ <10 ^ {-13} $ n的能量效率为2.245 pJ / bit使用20 GHz 850 nm共阴极VCSEL时,OMA为1.1 mW,ER为10 dB。所实现的值与预测的值相差不到10%,这清楚地说明了所提出的分析方法的有效性。通过优化调制级别和​​链路要求的性能,可以实现进一步的改进。在45和30 Gbit / s时,分别达到1.8和1.17 pJ / bit。

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