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Observation of a Transition From Inverse-Spin-Switch to Spin-Switch Behavior in Domain State of a Py/Nb/Py Trilayer

机译:在Py / Nb / Py三层结构域状态下从反向自旋转换到自旋转换行为的转变的观察

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摘要

We study spin switch behavior of the six bridges of bare, or pseudo spin-valve Py/Nb/Py trilayer prepared on a single chip. Magnetization measurement of both longitudinal and transverse moment on a large companion sample reveals that a significant amount of transverse component exists in the antiparallel domain (AD) state, which is originated in stray magnetic field from domain walls. The stray magnetic field induces flux lines into the Nb layer and the motion of these flux lines under the force exerted by the bias current is the main origin for inverse spin switch effect observed in the AD state of most bridges. In addition to inverse spin switch effect, we observe a peculiar behavior of a transition from inverse spin switch to spin switch behavior with decreasing temperature in one of six bridges. In order to understand the extraordinary behavior, we first note that the flux pinning should be present in this particular sample to suppress the dissipation by flux motion, then we propose that when the domain structure incidentally matches underlying distribution of pinning sites, spin switch effect in the AD state can occur by domain wall superconductivity and/or proximity effect.
机译:我们研究了在单个芯片上制备的裸或伪自旋阀Py / Nb / Py三层六桥的自旋开关行为。磁化测量大型同伴样品的纵向和横向力矩时,发现在反平行畴(AD)状态下存在大量横向分量,这是由畴壁的杂散磁场引起的。杂散磁场将磁通线感应到Nb层中,并且在偏置电流施加的力的作用下,这些磁通线的运动是在大多数桥的AD状态下观察到的逆自旋开关效应的主要原因。除了反向自旋开关效应外,我们还观察到六个桥之一中温度降低时从反向自旋开关向自旋开关行为过渡的特殊行为。为了了解异常行为,我们首先注意到在该特定样本中应存在通量钉扎,以抑制通量运动造成的耗散,然后我们建议,当畴结构偶然与钉扎位点的基础分布相匹配时,自旋开关效应AD状态可以通过畴壁超导和/或邻近效应发生。

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