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首页> 外文期刊>IEEE Transactions on Magnetics >Epitaxial growth of highly Bi-substituted garnet films with narrow FMR linewidth and low optical absorption loss
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Epitaxial growth of highly Bi-substituted garnet films with narrow FMR linewidth and low optical absorption loss

机译:高双取代石榴石薄膜的外延生长,具有窄的FMR线宽和低的光吸收损耗

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摘要

The epitaxial growth of highly Bi-substituted iron garnet films on gadolinium gallium garnet (GGG) substrates prepared by the LPE (liquid-phase-epitaxy) technique is investigated. The growth temperatures are carefully controlled so as to obtain crack-free films. A ferromagnetic resonance (FMR) linewidth of 0.6 Oe was measured, which is the smallest value reported to date for such films. The optical characteristics of the films are discussed. Magnetostatic surface wave propagation was observed in the prepared films. As the prepared films have low FMR linewidth, low optical absorption and high Faraday rotation, they have good potential for magnetostatic-wave-based optical waveguide devices.
机译:研究了用LPE(液相外延)技术制备的Bi镓石榴石(GGG)衬底上高Bi-取代铁石榴石膜的外延生长。小心地控制生长温度以获得无裂纹的膜。测得的铁磁共振(FMR)线宽为0.6 Oe,这是迄今为止此类膜的最小值。讨论了膜的光学特性。在制备的膜中观察到静磁表面波传播。由于所制备的膜具有低的FMR线宽,低的光吸收和高的法拉第旋转,因此它们对于基于静磁波的光波导器件具有良好的潜力。

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