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Dissipation in high T/sub c/ thin films

机译:耗散在高T / sub c /薄膜中

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Current methods of fabricating Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub 7- delta / thin films by pulsed laser deposition result in films that are multicrystalline, with grain sizes of typically 1 mu m, or are quasi-monocrystalline, with no discernable grain boundaries, according to whether the deposition is carried out at high or low temperatures, respectively. The authors studied the electrical characteristics of both these types of material. It was found that the I-V characteristics of the granular material follow the rule V alpha (I-I/sub c/)/sup x(T)/ over at least six orders of magnitude in voltage, at all temperatures and magnetic fields. In addition, x(T) changes sharply from x=1 to x=2 at the temperature at which I/sub c/ becomes finite. This behavior can be explained quantitatively by a phase-ordering transition. The nongranular material has a much sharper resistive transition and larger critical current. The authors examined the variation of critical current with magnetic field and temperature in this material and observed an exponential suppression of J/sub c/ with magnetic field.
机译:当前通过脉冲激光沉积制造Y / sub 1 / Ba / sub 2 / Cu / sub 3 / O / sub7-δ/薄膜的方法产生的薄膜是多晶体的,晶粒尺寸通常为1μm,或者为根据沉积是分别在高温还是低温下进行的,没有可辨别晶界的准单晶。作者研究了这两种材料的电学特性。发现在所有温度和磁场下,至少在六个数量级的电压上,粒状材料的I-V特性遵循规则V alpha(I-I / sub c /)/ sup x(T)/。另外,在I / sub c /变得有限的温度下,x(T)从x = 1急剧变化到x = 2。可以通过相序过渡来定量解释此行为。非粒状材料具有更尖锐的电阻跃迁和更大的临界电流。作者研究了该材料中临界电流随磁场和温度的变化,并观察了J / sub c /随磁场的指数抑制。

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