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Submicron-trackwidth inductive/MR composite head

机译:亚微米径宽感应/ MR复合头

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To explore the possibility for ultra-high areal density recording, submicron-trackwidth inductive-write/magnetoresistive-(MR)-read composite heads were fabricated. The focused ion beam etching technique was applied to fabricate a approximately 1- mu m-wide write-track completely aligned to the read-region of the MR sensor. The write head using multilayered Fe-based alloy pole pieces with a saturation magnetization of 2.0 T revealed sufficient writability and excellent frequency response. A shunt-biased MR sensor having a narrow gap-length operated at a high current density over 3*10/sup 7/ A/cm/sup 2/ is developed to reproduce a sufficient signal amplitude at high linear-density regions. Recording tests were carried out on a thin-film medium with a head-medium clearance of 0.05 mu m. The output voltage per micron of trackwidth over 400 mu V with symmetrical pulses, and a -6-dB rolloff density of around 90 kFCI were measured. The design procedure, fabrication method, and recording performances of the submicron-trackwidth inductive/MR composite heads which can attain 2 gigabits recording are discussed.
机译:为了探索超高面密度记录的可能性,制造了亚微米磁道宽度感应写入/磁阻-(MR)读取复合磁头。应用聚焦离子束蚀刻技术来制造大约1微米宽的写入轨道,该轨道完全对准MR传感器的读取区域。使用具有2.0 T饱和磁化强度的多层Fe基合金极靴的写头显示出足够的可写性和出色的频率响应。为了在高线密度区域再现足够的信号振幅,开发了在3×10 / sup 7 / A / cm / sup 2 /上以高电流密度工作的,具有窄间隙长度的分流MR传感器。在头介质间隙为0.05μm的薄膜介质上进行记录测试。测量了具有对称脉冲的每微米径宽超过400μV的输出电压,以及大约90 kFCI的-6 dB衰减密度。讨论了可以实现2吉比特记录的亚微米径宽感应/ MR复合磁头的设计程序,制造方法和记录性能。

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