$mu$ T and 10 T. Above that range, nonlinear e'/> Switchable Attenuation of Low Magnetic Fields for Integrated Vertical Hall Sensors Using a Ferromagnetic Layer
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Switchable Attenuation of Low Magnetic Fields for Integrated Vertical Hall Sensors Using a Ferromagnetic Layer

机译:使用铁磁层的集成式垂直霍尔传感器的低磁场可切换衰减

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摘要

The typical measurement range of integrated Hall sensors lies between approximately 10 $mu$ T and 10 T. Above that range, nonlinear effects occur due to an increasing Hall angle. Below that range, sensor offsets and noise corrupt measurements. Because of its geometry, vertical Hall elements exhibit considerably less sensitivity making them more susceptible to offset and noise. We present a method of attenuating external fields by using a coating of ferromagnetic material for the purpose of offset calibration. If the coating is driven into saturation by an integrated excitation wire, the external field becomes “visible” for the sensor and can be measured offset-free. As the integrated excitation wire is able to saturate the coating very locally the unsaturated regions of it may act as a concentrator of the external field and hence increases the sensitivity. Different materials and geometries were modelled and simulated with the finite element method (FEM) and the approach was tested for feasibility. The results of the simulations were used to design an experimental integrated circuit (IC) and to choose a suitable material for the coating layer. With this IC we tested the new sensor and obtained first results which are presented in this paper.
机译:集成霍尔传感器的典型测量范围介于大约10 $ mu $ T和10 T之间。在该范围之上,非线性效应由于霍尔角增加而发生。低于该范围,传感器失调和噪声破坏测量。由于其几何形状,垂直霍尔元件的灵敏度大大降低,从而使其更容易受到偏移和噪声的影响。我们提出了一种通过使用铁磁材料涂层来衰减外部场的方法,以用于偏移校准。如果通过集成的激励线将涂层驱动到饱和状态,则传感器的外部场变得“可见”,并且可以无偏移地进行测量。由于集成的激励线能够使涂层非常局部地饱和,其不饱和区域可能充当外部场的集中器,因此提高了灵敏度。使用有限元方法(FEM)对不同的材料和几何形状进行建模和仿真,并对该方法进行了可行性测试。仿真的结果用于设计实验性集成电路(IC)并为涂层选择合适的材料。使用该IC,我们测试了新传感器并获得了本文中介绍的第一批结果。

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