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首页> 外文期刊>IEEE Transactions on Magnetics >Giant magnetoresistance and antiferromagnetically coupled Co fraction in Co/Cu multilayers with varying number of periods
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Giant magnetoresistance and antiferromagnetically coupled Co fraction in Co/Cu multilayers with varying number of periods

机译:具有不同周期数的Co / Cu多层膜中的巨磁阻和反铁磁耦合Co分数

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摘要

The giant magnetoresistive signal of Co/Cu multilayers as a function of the number N/sub Co/ of Co layers is experimentally investigated for Cu thicknesses of 1 nm, i.e. in the 1st antiferromagnetic maximum, and for Co layer thickness of 1 nm. The stacks were deposited by DC magnetron sputtering on an Fe buffer. The fraction F/sub AF/ of the film that couples antiferromagnetically is derived from the hysteresis curves. A correction of F/sub AF/ is required for the buffer and one Co layer. The F/sub AF/ of stack periods close to the buffer is about 1, while F/sub AF/ reduces at large stack thicknesses. The GMR of stacks with small thicknesses is limited by the diffuse scattering at the outer surfaces. The GMR of thicker stacks depends on F/sub AF/ and the resistivity. Furthermore, the meaning of F/sub AF/ is discussed. By optimizing N/sub Co/, we achieved /spl Delta//spl rho///spl rho/'s as high as 72% at room temperature.
机译:对于1nm的Cu厚度,即在第一反铁磁最大值中以及对于Co层厚度为1nm,实验研究了Co / Cu多层的巨磁阻信号与Co层的数目N / sub Co /的关系。通过DC磁控溅射将叠层沉积在Fe缓冲剂上。从磁滞曲线得出反铁磁耦合的薄膜的F / sub AF /分数。缓冲区和一层Co层需要校正F / sub AF /。接近缓冲区的堆栈周期的F / sub AF /约为1,而堆栈厚度较大时F / sub AF /减小。厚度小的叠层的GMR受外表面的散射影响。较厚堆叠的GMR取决于F / sub AF /和电阻率。此外,还讨论了F / sub AF /的含义。通过优化N / sub Co /,我们在室温下获得了高达72%的/ spl Delta // spl rho /// spl rho /。

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