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首页> 外文期刊>IEEE Transactions on Magnetics >Role of interfaces in changes of magnetic properties and magnetoresistance of Alfenol 16
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Role of interfaces in changes of magnetic properties and magnetoresistance of Alfenol 16

机译:界面在Alfenol 16磁性和磁阻变化中的作用

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摘要

Influence of interfaces, predominantly grain boundaries and high dislocation density regions, on magnetic properties (parameters of hysteresis loops and Mossbauer spectra) and magnetoresistance, is studied on the Alfenol 16 alloy. The amount of interfaces was changed by heat and mechanical treatments. Hysteresis loops differ in polarization values near the saturation as well as in shape. In the samples with D0/sub 3/ superstructure hard approach to saturation indicates ferrimagnetic like behaviour. Changes in the low held part of magnetoresistance curves depend on kind and amount of interfaces: conduction electrons scatter on domain walls being closely bound to interface objects. The slope of the magnetoresistance curve for high fields is in correlation with the degree of D0/sub 3/ order: Al atoms occupying lattice positions out of the D0/sub 3/ order disturb the spin orientation. It increases the resistivity, in comparison with other centres of scattering of conduction electrons removable by external field, quite substantially.
机译:在Alfenol 16合金上研究了界面(主要是晶界和高位错密度区域)对磁性(磁滞回线和Mossbauer谱的参数)和磁阻的影响。通过热处理和机械处理来改变界面的数量。磁滞回线在饱和附近的极化值以及形状上都不同。在具有D0 / sub 3 /超结构的样品中,很难达到饱和表示铁磁现象。磁阻曲线的低保持部分的变化取决于界面的种类和数量:传导电子在畴壁上散射,该畴壁与界面物体紧密结合。高磁场的磁阻曲线的斜率与D0 / sub 3 /阶的程度相关:Al原子占据D0 / sub 3 /阶以外的晶格位置会干扰自旋取向。与可被外场去除的传导电子的其他散射中心相比,它大大提高了电阻率。

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