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首页> 外文期刊>IEEE Transactions on Magnetics >Magnetoresistance characteristics of (NiFe/Ni/NiFe)/Cu multilayers
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Magnetoresistance characteristics of (NiFe/Ni/NiFe)/Cu multilayers

机译:(NiFe / Ni / NiFe)/ Cu多层膜的磁阻特性

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摘要

By inserting two or three layers of NiFe at the interfaces of Ni/Cu multilayers, the magnetoresistance properties of Ni/Cu could be appreciably improved. 50 Oe of saturation magnetic field and 6% of magnetoresistance were obtained in glass/Cu(50 /spl Aring/)[NiFe(7 /spl Aring/)Ni(6 /spl Aring/)NiFe(7 /spl Aring/)/Cu(20 /spl Aring/)]/sub 20/ structured multilayers. 25 Oe of saturation magnetic field and 4.5% of magnetoresistance were obtained in 4/spl deg/ tilt-cut Si(111)/NiFe(50 /spl Aring/)[NiFe(7 /spl Aring/)Ni(6 /spl Aring/)NiFe(7 /spl Aring/)/Cu(20 /spl Aring/)]/sub 10/. Almost negligible hysteresis was shown in both structures, which turned out to be much advantageous in obtaining magnetoresistance signals under ac magnetic field.
机译:通过在Ni / Cu多层界面处插入两层或三层NiFe,可以显着改善Ni / Cu的磁阻特性。在玻璃/ Cu(50 / spl Aring /)[NiFe(7 / spl Aring /)Ni(6 / spl Aring /)NiFe(7 / spl Aring /)/中,获得了50 Oe的饱和磁场和6%的磁阻。 Cu(20 / spl Aring /)] / sub 20 /结构化多层。在4 / spl deg /倾斜切割的Si(111)/ NiFe(50 / spl Aring /)[NiFe(7 / spl Aring /)Ni(6 / spl Aring)中获得25 Oe的饱和磁场和4.5%的磁阻/)NiFe(7 / spl Aring /)/ Cu(20 / spl Aring /)] / sub 10 /。在两种结构中都显示了几乎可以忽略的磁滞,这在交流磁场下获得磁阻信号非常有利。

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