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Magnetoresistivity of micron size (10/spl middot/0) epitaxial Co wires

机译:微米尺寸(10 / spl middot / 0)外延Co线的磁阻

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Magnetoresistivity effects in association with the magnetic domain structure were studied by using 1 /spl mu/m wide epitaxial (10/spl middot/0) Co wires oriented parallel and perpendicular to the magnetic easy [001] axis. The parallel wire exhibited a large anisotropic magnetoresistivity ratio of /spl sim/11 % at 5 K, which turned to be negative above 214 K due to the temperature variable anisotropic magnetoresistivity effect. A negative domain wall contribution to the resistivity was observed only in the temperature range from 200 K to 220 K. On the contrary, the perpendicular wire exhibited a small positive wall contribution ranging from 3/spl times/10/sup -4/ /spl mu//spl Omega/cm at 5 K to 6.9/spl times/10/sup -4/ /spl mu//spl Omega/cm at 300 K.
机译:通过使用平行于并垂直于易磁化[001]轴的1 / splμ/ m宽外延(10 / spl middot / 0)Co线研究了与磁畴结构相关的磁阻效应。平行线在5 K时表现出较大的各向异性磁阻率/ spl sim / 11%,由于温度可变的各向异性磁阻效应,在214 K以上变为负值。仅在200 K至220 K的温度范围内观察到负畴壁对电阻率的贡献。相反,垂直导线的正壁贡献较小,范围为3 / spl次/ 10sup -4 / / spl mu // splΩ/ cm在5 K到6.9 / spl次/ 10 / sup -4 / / spl mu // splΩ/ cm在300 K时

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