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首页> 外文期刊>Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on >An Adaptive Flash Translation Layer for High-Performance Storage Systems
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An Adaptive Flash Translation Layer for High-Performance Storage Systems

机译:高性能存储系统的自适应闪存转换层

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摘要

While the capacity of flash-memory storage systems keeps increasing significantly, an effective and efficient management of flash-memory space has become a critical design issue. Different granularities in space management impose different management costs and mapping efficiency. In this paper, we will explore an address translation mechanism (AddrTM) that can dynamically and adaptively switch between different granularities in the mapping of logical block addresses into physical block addresses in flash-memory management. The objective is to provide high performance in address mapping and space utilization and, at the same time, to have the main memory requirements, the garbage collection overhead, and the system initialization time under proper management. The experimental results show that the proposed adaptive mechanism can provide better performance improvement and practicability than other well-known coarse-grained management mechanisms over realistic workloads.
机译:虽然闪存存储系统的容量一直在显着增加,但有效且高效地管理闪存空间已成为一个关键的设计问题。空间管理中的不同粒度会带来不同的管理成本和映射效率。在本文中,我们将探索一种地址转换机制(AddrTM),该机制可以在闪存管理中将逻辑块地址映射为物理块地址时动态地自适应地在不同粒度之间切换。目的是在地址映射和空间利用方面提供高性能,同时在适当的管理下拥有主要的内存需求,垃圾回收开销和系统初始化时间。实验结果表明,与其他众所周知的粗粒度管理机制相比,所提出的自适应机制在实际工作量上可以提供更好的性能改进和实用性。

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