A simple configuration is proposed that incorporates an effective cancellation of the nonlinearity of the V/sub DS/-i/sub D/ characteristics of the FET to produce a voltage-controlled resistance (VCR) with linear range considerably more extended than other conventional FET-based VCRs. The configuration is shown to be simpler than op-amp-JFET based VCRs yet is more versatile than the previously known circuits. It makes possible the realization of VCC and VCL elements from the same configuration, which cannot be realized from the earlier circuits. CMOS versions of the proposed schemes of the VCC and VCL are suggested.
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机译：提出了一种简单的配置，该配置可以有效抵消FET的V / sub DS / -i / sub D /特性的非线性，从而产生线性范围比其他常规FET扩展得多的压控电阻（VCR）基于VCR的录像机。所示的配置比基于运放JFET的VCR更简单，但比以前已知的电路具有更多的通用性。这使得可以从相同的配置中实现VCC和VCL元素，而这是以前的电路无法实现的。建议使用VCC和VCL的拟议方案的CMOS版本。
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