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首页> 外文期刊>Circuits and Systems I: Regular Papers, IEEE Transactions on >A SiGe BiCMOS Eight-Channel Multidithering Sub-Microsecond Adaptive Controller
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A SiGe BiCMOS Eight-Channel Multidithering Sub-Microsecond Adaptive Controller

机译:SiGe BiCMOS八通道多抖动亚微秒自适应控制器

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A SiGe BiCMOS mixed-signal adaptive controller-on-chip is presented that implements gradient descent of a supplied analog control objective. Eight analog variables controlling the external plant are perturbed in parallel using sinusoidal dithers, and their gradient components are estimated by parallel synchronous detection of the dithers in the control objective. Translinear all-NPN bipolar circuits achieve linear tuning of frequency and amplitude in the oscillators and synchronous detectors, covering a 4-kHz–600-MHz range in dither frequencies with $-$ 30-dB/octave suppression of intermodulation products. Experimental results demonstrate adaptive optimization of a three-variable nonlinear plant within 1 ${rm mu}hbox{s}$ for dithers in the 100–200-MHz frequency range. The chip measures 3 mm $times$ 3 mm in 0.5-${rm mu}hbox{m}$ SiGe and consumes 110 mW at 3.3-V supply.
机译:提出了一种SiGe BiCMOS混合信号自适应片上控制器,该控制器可实现所提供的模拟控制目标的梯度下降。使用正弦抖动并行控制八个控制外部设备的模拟变量,并通过并行同步检测控制对象中的抖动来估计它们的梯度分量。跨线性全NPN双极性电路可在振荡器和同步检波器中实现频率和幅度的线性调谐,在抖动频率中覆盖4-kHz-600-MHz范围,并具有$-$ 30-dB /倍频程的互调抑制。实验结果表明,对于100–200 MHz频率范围内的抖动,在1 $ {h} hbox {s} $内对三变量非线性植物进行了自适应优化。该芯片的尺寸为0.5mm x SiGe,尺寸为3mm x 3mm,在3.3V电源下的功耗为110mW。

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