A 25 Gb/s 65-nm CMOS Low-Power Laser Diode Driver With Mutually Coupled Peaking Inductors for Optical Interconnects

摘要

A 25 Gb/s laser diode (LD) driver has been developed on the basis of standard 65 nm CMOS technology for optical interconnects. The LD driver consists of a main driver capable of providing an average current of 30 mA and a predriver providing a gain of 20 dB. The main driver uses mutually coupled inductors to adjust the inductive peaking to improve eye patterns under various packaging conditions. The predriver uses CMOS active feedback to achieve a wide bandwidth and high gain, despite its small size and low power consumption. The fabricated circuit achieves data rates of 25 Gb/s, consumes 156 mW (6.3 mW/Gb/s) and occupies an area of 0.011 $hbox{mm}^{2}$ .