High-speed bulk InGaAsP-InP electroabsorption modulators with bandwidth in excess of 20 GHz

摘要

Bulk InGaAsP-InP electroabsorption optical modulators with high extinction ratio, low drive voltage, and high modulation bandwidth at lambda =1.3 mu m are reported. The devices have a tapered-fiber-to-modulator-to-tapered-fiber extinction ratio greater than 20 dB at a drive voltage of >5 V. Very low capacitance modulators (>0.2 pF) were fabricated using SiO/sub 2/ bonding pad isolation, resulting in a measured electrical modulation bandwidth in excess of 20 GHz.