1.3-/spl mu/m Vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors

摘要

We demonstrate, for the first time, double-bonded AlGaInAs strain-compensated quantum-well 1.3-/spl mu/m vertical-cavity surface-emitting lasers (VCSELs). GaAs-AlAs Bragg mirrors were wafer-bonded on both sides of a cavity containing the AlGaInAs strain-compensated multiple-quantum-well active layers sandwiched by two InP layers. The lasers have operated under pulsed conditions at room temperature. A record low pulsed threshold current density of 4.2 kA/cm/sup 2/ and a highest maximum light output power greater than 4.6 mW have been achieved. The maximum threshold current characteristic temperature T/sub 0/ of 132 K is the best for any long wavelength VCSELs. The laser operated in a single-longitudinal mode, with a side-mode suppression ratio of more than 40 dB, which is the best results for 1.3-/spl mu/m VCSELs.