Integrated 1.3-/spl mu/m DFB laser electroabsorption modulator based on identical MQW double-stack active layer with 25-GHz modulation performance

摘要

1.31-/spl mu/m electroabsorption modulators monolithically integrated with a DFB laser diode have been realized using an identical InGaAsP-InP multiple quantum-well-layer structure composed of two different QW types. Low laser threshold currents >13 mA and high 3-dBe cutoff frequency up to /spl sim/25 GHz have been measured.