Efficient Modulation of InP-Based 1.3-(mu)m VCSELs With AsSb-Based DBRs

摘要

We demonstrate efficient error-free 3.125-Gb/s modulation of InP-based 1.3-(mu)m vertical-cavity surface-emitting lasers with AsSb-based distributed Bragg reflectors up to 60 deg C. These devices demonstrated high differential efficiencies [>60percent at room temperature (RT)], which resulted in a required bias current for modulation of only 5.9 mA. The measured extinction ratios were greater than 8 dB up to 60 deg C with a peak-to-peak drive voltage of only 800 mV. The 3-dB-down RT small-signal bandwidth was 4.4 GHz at a bias of 5.9 mA.