首页> 外文期刊>IEEE Photonics Technology Letters >High-Speed (60 GHz) and Low-Voltage-Driving Electroabsorption Modulator Using Two-Consecutive-Steps Selective-Undercut-Wet-Etching Waveguide
【24h】

High-Speed (60 GHz) and Low-Voltage-Driving Electroabsorption Modulator Using Two-Consecutive-Steps Selective-Undercut-Wet-Etching Waveguide

机译:高速(60 GHz)和低电压驱动电吸收调制器,采用两个连续步骤的选择性-下切-湿蚀刻波导

获取原文
获取原文并翻译 | 示例
           

摘要

Based on a novel structure of waveguide, a broadband electroabsorption modulator (EAM) with low driving voltage and high extinction ratio has been demonstrated in this letter. The waveguide of InGaAsP-InP p-i-n layer structure is fabricated by two consecu
机译:基于波导的新颖结构,本文证明了具有低驱动电压和高消光比的宽带电吸收调制器(EAM)。 InGaAsP-InP p-i-n层结构的波导是由两个连续的

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号