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首页> 外文期刊>IEEE Photonics Technology Letters >Near-Ballistic Uni-Traveling-Carrier Photodiode- Based V-Band Optoelectronic Mixers With Internal Up-Conversion-Gain, Wide Modulation Bandwidth, and Very High Operation Current Performance
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Near-Ballistic Uni-Traveling-Carrier Photodiode- Based V-Band Optoelectronic Mixers With Internal Up-Conversion-Gain, Wide Modulation Bandwidth, and Very High Operation Current Performance

机译:具有内部上变频增益,宽调制带宽和非常高的工作电流性能的基于近弹道的单行进载波光电二极管的V带光电混合器

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摘要

We construct a high-performance optoelectronic mixer by integrating a near-ballistic uni-traveling-carrier photodiode with a V-band (50–75 GHz) coplanar-waveguide-based bandpass filter. The demonstrated device shows an improvement in the V-band output radio-frequency (RF) power and conversion loss of around 3 and 10 dB, respectively, over that of the control device, which does not have such an integrated filter. The strong nonlinearity of the ballistic-transport of the electrons in the active device, and the excellent RF performance of the integrated filter help us to achieve an internal-conversion gain of around 1 dB, from the low to very high optical injected local-oscillator power (20.6 dBm), which corresponds to an approximately 17-mA high-output photocurrent, and very wide up-conversion bandwidth (${>}$15 GHz) at the V-band.
机译:我们通过将近弹道单行进载波光电二极管与基于V波段(50-75 GHz)共面波导的带通滤波器集成在一起,构建了高性能的光电混频器。与没有集成滤波器的控制设备相比,所展示的设备在V波段输出射频(RF)功率和转换损耗方面分别提高了约3和10 dB。有源器件中电子弹道传输的强非线性和集成滤波器的出色RF性能帮助我们实现了从低光注入到高光注入本振的大约1 dB的内部转换增益功率(20.6 dBm),对应于V处约17mA的高输出光电流和非常宽的上变频带宽($ {>} $ 15 GHz) -带。

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