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Large-Format Voltage-Tunable Dual-Color Midwavelength Infrared Quantum-Well Infrared Photodetector Focal Plane Array

机译:大幅面电压可调双色中波红外量子阱红外光电探测器焦平面阵列

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We report a large-format (640 $,times,$512) voltage-tunable quantum-well infrared photodetector (QWIP) focal plane array (FPA) for dual-color imaging in the midwavelength infrared (3–5 $mu$m) band. Voltage-tunable spectral response has been achieved through series connection of two eight-well stacks of AlGaAs–InGaAs epilayers grown by molecular beam epitaxy on GaAs substrate. The peak responsivity wavelength of the detectors is shifted from 4.1 $mu$m (color 1) to 4.7 $mu$ m (color 2) as the bias is increased within the limit applicable by commercial read-out integrated circuits. The operability of the FPA is ${sim}$99.5% with noise equivalent temperature differences of ${sim}$60 and 30 mK (f/1.5) in color modes 1 and 2, respectively. To our knowledge, this is the first large-format voltage-tunable dual-color QWIP FPA reported for midwavelength thermal imaging.
机译:我们报告了用于中波长红外(3–5 $ mu $ m)波段双色成像的大幅面(640 $,times,$ 512)电压可调量子阱红外光电探测器(QWIP)焦平面阵列(FPA) 。电压可调光谱响应是通过在GaAs衬底上通过分子束外延生长的两个八阱AlGaAs-InGaAs外延层的串联连接实现的。随着偏压在商业读出集成电路可应用的极限内增加,检测器的峰值响应波长从4.1μm(颜色1)变为4.7μm(颜色2)。 FPA的可操作性为$ {sim} $ 99.5%,在彩色模式1和2下,噪声等效温度差分别为$ {sim} $ 60和30 mK(f / 1.5)。据我们所知,这是首次报道的用于中波长热成像的大幅面电压可调双色QWIP FPA。

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