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首页> 外文期刊>Photonics Technology Letters, IEEE >Ho:KLu(WO4)2 Microchip Laser Q-Switched by a PbS Quantum-Dot-Doped Glass
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Ho:KLu(WO4)2 Microchip Laser Q-Switched by a PbS Quantum-Dot-Doped Glass

机译:Ho:KLu(WO 4 2 由PbS量子点掺杂玻璃进行Q开关的Microchip激光器

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We report on passive Q-switching of a Ho:KLu(WO) (Ho:KLuW) microchip laser in-band-pumped by a Tm:KLuW laser at . As a saturable absorber, PbS-quantum-dot-doped glass was used which exhibits a saturation intensity of MW/cm near 2 . Maximum average output power of 84 mW was achieved from the Ho laser at 2.061 with a slope efficiency of 42% (with respect to the absorbed pump power). The shortest pulse duration was 30 ns. In the continuous-wave mode, the maximum output power of the Ho laser reached 530 mW at 2.08 with a slope efficiency of 88%.
机译:我们报告了由Tm:KLuW激光器带内泵浦的Ho:KLu(WO)(Ho:KLuW)微芯片激光器的无源Q开关。作为可饱和吸收剂,使用了PbS-量子点掺杂玻璃,其在2附近表现出MW / cm的饱和强度。 Ho激光器在2.061处实现的最大平均输出功率为84 mW,斜率效率为42%(相对于吸收的泵浦功率)。最短的脉冲持续时间为30 ns。在连续波模式下,Ho激光器的最大输出功率在2.08时达到530 mW,斜率效率为88%。

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