Monolithic AlGaAs-GaAs HBT single- and dual-stage ultra-broadband amplifiers

摘要

The circuit design and performance of single- and dual-stage ultra-wideband monolithic microwave integrated circuit (MMIC) amplifiers using AlGaAs-GaAs heterojunction bipolar transistors (HBTs) are presented. The single-stage feedback amplifier has 10 dB of gain and a 3-dB bandwidth of DC to 18 GHz. The two-stage AC-coupled version achieves over 20 dB of gain and has a 3-dB bandwidth of 0.1 to 18 GHz. These amplifiers are extremely small in size (single-stage: 24 mils*24 mils, two-stage: 24 mils*40 mils) since there are no reactive matching elements. This results in high chip yield and low cost.