44-GHz high-efficiency InP-HEMT MMIC power amplifier

摘要

A high-efficiency power amplifier was developed using 0.15-/spl mu/m gatelength, InP-based (GaInAs/AlInAs/InP), HEMT MMIC technology. The amplifier demonstrated state-of-the-art performance. The output power at 1-dB compression point was 28 dBm at 44.5 GHz. The corresponding power-added efficiency was 31% and gain was 7 dB. The total chip area was 2.5 mm/sup 2/.