Densely arrayed eight-wavelength semiconductor lasers fabricated bymicroarray selective epitaxy

摘要

This paper describes a novel epitaxial growth technique, callednmicroarray selective epitaxy (MASE), for fabricating extremely smallnintegrated photonic devices. The MASE technique makes it possible tonform densely arrayed (pitch <10 Μm) multiple-quantum-well (MQW)nwaveguides without semiconductor etching as well as to control thenbandgap energy of each waveguide. The technique is demonstrated fornfabricating an eight-channel 10-Μm-spacing microarray MQW structure,nand the bandgap wavelength of each channel is successfully controlled bynchanging the SiO2 mask pattern over a range of 90 nm. Thentechnique is also applied to the fabrication of densely arrayed,neight-wavelength, Fabry-Perot laser diodes. The laser section is only 70npm wide and 400 Μm long. Eight different lasing wavelengths (eachnover 80 nm), a uniform threshold current of less than 9 mA, and annoutput power of over 10 mW are obtained