Monolithic integration of laser and passive elements usingselective QW disordering by RTA with SiO2 caps of differentthicknesses

摘要

Area-selective disordering of an InGaAs strained quantum wellsn(QWs) was performed by rapid thermal annealing with thick and thin SiOn2 caps. Fabry-Perot lasers were fabricated on anselectively-disordered wafers, and a lasing wavelength difference asnlarge as 23 nm was obtained between the lasers in 300-nm and 30-nmncapped areas. We present fabrication of lasers integrated withndisordered passive waveguides and demonstrate significant reduction ofnthe passive waveguide loss from roughly 40 cm-1 to 3ncm-1. A distributed Bragg reflector laser with QW disorderingnin the grating area was demonstrated, and remarkable improvement ofnlaser characteristics was achieved compared to a laser withoutndisordering