Germanium (Ge) and silicon-germanium (Si-Ge) have the potential to integrate optics with Si IC technology. The quantum-confined Stark effect, a strong electroabsorption mechanism often observed in III–V quantum wells (QWs), has been demonstrated in Si-Ge/Ge QWs, allowing optoelectronic modulators in such group IV materials. Here, based on photocurrent electroabsorption experiments on different samples and fitting of the resulting allowed and nominally forbidden transitions, we propose more accurate values for key parameters such as effective masses and band offsets that are required for device design. Tunneling resonance modeling including conduction band nonparabolicity was used to fit the results with good consistency between the experiments and the fitted transitions.
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机译：锗（Ge）和硅锗（Si-Ge）具有将光学与Si IC技术集成的潜力。 Si-Ge / Ge QW中已经证明了量子约束的Stark效应，这是一种在III–V量子阱（QW）中经常观察到的强电吸收机制，可以在此类IV材料中使用光电调制器。在此，基于不同样品上的光电流电吸收实验以及所产生的允许和名义上禁止的跃迁的拟合，我们为关键参数（例如器件设计所需的有效质量和能带偏移）提出了更准确的值。隧道共振模型（包括导带非抛物线形）用于拟合结果，并且在实验和拟合过渡之间具有良好的一致性。
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