首页> 外文期刊>Selected Topics in Quantum Electronics, IEEE Journal of >Analysis of QD VCSEL Dynamic Characteristics Considering Homogeneous and Inhomogeneous Broadening
【24h】

Analysis of QD VCSEL Dynamic Characteristics Considering Homogeneous and Inhomogeneous Broadening

机译:考虑均匀和不均匀展宽的QD VCSEL动态特性分析

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

In this paper, for the first time we present a self-consistent opto-electro-thermal model to analyze the influence of homogeneous and inhomogeneous broadening on the modulation response of 1.3-μm oxide-confined quantum dot InGaAs-GaAs vertical cavity surface emitting laser. In this model, the dependence of 3-dB bandwidth on the self-heating effect is discussed and the influence of inhomogeneous broadening on frequency response is studied. We show that there is an optimized amount of injected current density for the highest maximum bandwidth.
机译:本文首次提出了一个自洽的光电热模型,以分析均匀和不均匀展宽对1.3μm氧化物限制的量子点InGaAs-GaAs垂直腔面发射激光器的调制响应的影响。 。在该模型中,讨论了3 dB带宽对自热效应的依赖性,并研究了非均匀展宽对频率响应的影响。我们表明,对于最高的最大带宽,有优化的注入电流密度。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号