Time-Domain Traveling Wave Model of Quantum Dot DFB Lasers

摘要

We present a time-domain traveling wave model for the simulation of InAs/GaAs quantum dot DFB lasers. The optical susceptibility of the quantum dot (QD) active material is represented through a series of numerical filters that account for the interplay between homogeneous and inhomogeneous broadening of the gain spectrum of the self-assembled QDs. We also consider separate rate equations for electrons and holes for representing the different dynamics of carriers in the conduction and the valence band. We present examples of simulation results focusing in particular on the dynamic properties of the laser (modulation bandwidth, nonreturn-to-zero direct modulation, chirp, α-parameter, etc.) with the purpose of comparing these simulation results with the experimental ones found in the literature.