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Flash Memories: ISPP Renewal Theory and Flash Design Tradeoffs

机译:闪存:ISPP更新理论和闪存设计的权衡

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In the write process of multilevel per cell (MLC) flash memories, an iterative approach is used to mitigate the monotonicity problem. The monotonicity in programming is considered to be the major restriction in MLC flash. To solve this issue, an iterative approach called incremental step pulse programming (ISPP) is used to concurrently program lots of cells in small steps. In this paper, we are mostly concerned with deriving a mathematical model for iterative programming using the framework of renewal theory. We obtain a closed-form approximation for the probability distribution of the number of steps required in the ISPP process. We also bound the maximal error between the true distribution and our approximation. Moreover, the results obtained help to accurately analyze the effect of inter-cell interference in this type of memory. Finally, we devise an adaptive step size approach for write process to strike a balance between latency and lifetime under fixed bit error rate constraints or information rate constraints.
机译:在多级每单元(MLC)闪存的写入过程中,使用迭代方法来缓解单调性问题。编程中的单调性被认为是MLC闪存的主要限制。为了解决此问题,使用了一种称为增量步进脉冲编程(ISPP)的迭代方法,以小步同时编程许多单元。在本文中,我们主要关注的是使用更新理论的框架来推导用于迭代编程的数学模型。对于ISPP过程中所需步骤数的概率分布,我们获得了封闭形式的近似值。我们还将最大误差限制在真实分布和我们的近似之间。此外,获得的结果有助于准确分析这种类型的存储器中的小区间干扰的影响。最后,我们为写过程设计了一种自适应步长方法,以在固定误码率约束或信息率约束下在等待时间和生命周期之间取得平衡。

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