机译:闪存:ISPP更新理论和闪存设计的权衡
Department of Electrical Engineering, University of Hawaii at Manoa, Honolulu, HI, USA;
Seagate Technology, Fremont, CA, USA;
Department of Electrical Engineering, University of Hawaii at Manoa, Honolulu, HI, USA;
Department of Electrical Engineering, University of Hawaii at Manoa, Honolulu, HI, USA;
Programming; Threshold voltage; Computer architecture; Microprocessors; Transistors; Logic gates; TV;
机译:3-D充电陷阱NAND闪存ISPP的紧凑型号
机译:基于MLC的闪存存储系统的闪存转换层下的可靠性增强设计
机译:基于SLC-MLC闪存的多库固态磁盘的混合闪存转换层设计
机译:使用更新理论在MLC闪存中写入过程建模
机译:基于Memristor和EFLASH-MEMORY的强大物理不可渗透功能的设计与机器学习弹性
机译:短暂闪烁的场景可以存储在长期记忆中
机译:通过设计用于x8 NaND闪存器件的闪存控制器的性能增强