SiGe Photo-Transistor for Low-Cost SSMF-Based Radio-Over-Fiber Applications at 850nm

摘要

This paper investigates the possibility of implementing SiGe Hetero-junction bipolar Photo-Transistor (HPT) within low cost and low power consumption Radio-over-Fiber (RoF) systems based on standard single mode fiber (SSMF) operating in the first optical window for wireless communication networks scenarios. The SiGe HPT under study has potential lower cost compared to standard PIN photo-detectors as it is fabricated through the consolidated SiGe bipolar transistor process technologies, allowing the possible integration with Si-based circuits. Various operation modes of the photo-transistor (such as threeterminals and two-terminals) are investigated, analyzing their impact on the SSMF-based RoF link in terms of gain and noise (including modal noise fluctuations) for a frequency range up to 2.5 GHz. A 20 MHz LTE transmission is finally demonstrated as example of possible applications of the studied RoF link.