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A novel cladding structure for semiconductor quantum-well lasers with small beam divergence and low threshold current

机译:具有小束发散和低阈值电流的半导体量子阱激光器的新型包层结构

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摘要

A novel cladding structure is proposed and analyzed for semiconductor quantum-well lasers to achieve a small vertical-beam divergence and a low threshold current density simultaneously. This cladding structure is designed to guide a wide optical mode but with a high peak intensity in quantum wells. The wide expansion of the optical mode results in a small beam divergence. In addition, the high optical Intensity in quantum wells causes a low threshold current density. This novel cladding structure is optimized. The result shows that this type of cladding structures can achieve a beam divergence as small as 14.6/spl deg/ while the threshold current density remains small.
机译:提出了一种新颖的包覆结构,并针对半导体量子阱激光器进行了分析,以同时实现较小的垂直光束发散和较低的阈值电流密度。这种包层结构旨在引导较宽的光学模式,但在量子阱中具有较高的峰值强度。光学模式的广泛扩展导致较小的光束发散。另外,量子阱中的高光强度导致低阈值电流密度。优化了这种新颖的覆层结构。结果表明,这种类型的覆层结构可以实现小至14.6 / spl deg /的电子束发散,而阈值电流密度仍然很小。

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