Monte Carlo simulations of carrier transport in AlGaInP laser diodes

摘要

A self-consistent ensemble Monte Carlo simulation of charge transport in AlGaInP quantum-well (QW) lasers has been developed in an effort to understand the temperature sensitivity of these devices. In particular, the lasing capability of a three-well design has been studied at 300 and 360 K. Although the electron and hole leakage currents are found to increase with the temperature, this does not explain a reduction in the emitted light hole emission time intensity for the particular device studied. Instead, the fall in the light output is due to increased emission from the QW's, since this reduces the net electron and hole capture efficiency.