2-D-3-D crossover in single asymmetric quantum wells: investigationof the electric field and temperature effects

摘要

The 2-D-3-D crossover in n-doped GaAs-Ga0.63Al0.37nAs single asymmetric quantum wells is theoretically investigated.nThe coupled one-dimensional Schrodinger and Poisson equations are solvednself-consistently, in the frame of the finite-difference method. Thenpresent study shows that the 2-D-3-D crossover depends upon thengeometrical parameters, as for instance, the quantum well width andnspacer layer width. It also depends on the temperature and the gatenvoltage applied on an asymmetric quantum-well-based device. The 2-D-3-Dncrossover diagrams involving the well width dependence of both thenelectric field and the temperature are presented and discussed