Design and fabrication of zinc oxide thin-film ridge waveguides on silicon substrate with ultraviolet amplified spontaneous emission

摘要

Zinc oxide (ZnO) thin-film ridge waveguides have been designed and fabricated on n-type (100) silicon substrate. A filtered cathodic vacuum arc technique is used to deposit high-crystal-quality ZnO thin films on lattice-mismatched silicon substrates at 230°C. A ridge waveguide of width ∼2 Μm and height ∼0.1 Μm is defined on the ZnO thin film by plasma etching. Room-temperature amplified spontaneous emission is observed with peak wavelength at ∼385 nm under 355-nm optical excitation. It is found that the net optical gain of the ZnO thin-film ridge waveguides can be as large as 120 cm-1 at a pump intensity of ∼1.9 MW/cm2.