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Analysis of the Phase Noise in Saturated SOAs for DPSK Applications

机译:DPSK应用中饱和SOA中的相位噪声分析

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摘要

A theoretical model is used to analyze the impact of phase noise on the performance of semiconductor optical amplifiers (SOAs) in the saturation regime for differential phase-shift keying (DPSK) applications. It is found that the variance of the differential phase error scales as T~(2)/tau_(c)~(2) for tau_(c) T, where T is the bit period and tau_(c) is the carrier lifetime of the SOA. This suggests that the adverse effect of saturation-induced phase noise can be significantly reduced by increasing the bit rate or the carrier lifetime.
机译:理论模型用于分析相位噪声对差分相移键控(DPSK)应用中饱和状态下半导体光放大器(SOA)性能的影响。对于tau_(c) T,发现差分相位误差的方差为T〜(2)/ tau_(c)〜(2),其中T是比特周期,tau_(c)是载波SOA的生命周期。这表明可以通过增加比特率或载波寿命来显着降低饱和引起的相位噪声的不利影响。

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