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Medium-Voltage Solid-State Transformer: Technology for a Smarter and Resilient Grid

机译:中压固态变压器:更智能,更具弹性的电网技术

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The most important impact of power electronics on our society in the last 50 years has been the elimination of the 60-Hz ac power delivery system for consumer electronic products. Central to this achievement is the use of silicon (Si) power devices and pulsewidth modulation (PWM) techniques in delivering regulated ac and dc powers to low-voltage (LV) loads such as light-emitting diodes and computers. These solid-state power electronic converters have provided our society numerous benefits, including high-quality power and substantial energy savings. They also form the core technology for integrating renewable energies such as wind and solar into our power grid. Figure 1 shows a typical power delivery architecture commonly found in computer supplies and data centers. The incoming universal ac grid power is converted by a power factor correction circuit to 400 V dc before it is stepped down to a lower voltage dc intermediate bus, such as 12 V, and then it powers the digital loads at voltages as low as 1 V by a point-of-load converter. Si power metal-oxide-semiconductor field-effective transistor (MOSFET) transistors from 20 V to 700 V are almost exclusively used in this application with switching frequencies from tens of kilohertz to one megahertz. Emerging devices based on gallium nitride (GaN) heterojunction field effect transistors reduce the switching and conduction losses when compared with Si power MOSFETs and are, therefore, poised to compete in these applications, driven by the need for higher energy efficiency and higher power density.
机译:在过去的50年中,电力电子对我们社会的最重要影响是取消了用于消费电子产品的60 Hz交流电力输送系统。这项成就的核心是使用硅(Si)功率器件和脉宽调制(PWM)技术向低压(LV)负载(例如发光二极管和计算机)提供经过调节的交流和直流电源。这些固态功率电子转换器为我们的社会带来了许多好处,包括高质量的功率和大量的节能效果。它们还构成了将风能和太阳能等可再生能源整合到我们的电网中的核心技术。图1显示了计算机电源和数据中心中常见的典型供电架构。输入的通用交流电网电源在经过降压至较低电压的直流中间总线(例如12 V)之前,由功率因数校正电路转换为400 V dc,然后以低至1 V的电压为数字负载供电通过负载点转换器。 20 V至700 V的Si功率金属氧化物半导体场效应晶体管(MOSFET)晶体管几乎专门用于此应用中,其开关频率从数十千赫兹到1兆赫兹。与Si功率MOSFET相比,基于氮化镓(GaN)异质结场效应晶体管的新兴器件可降低开关损耗和传导损耗,因此,在对更高能效和更高功率密度的需求推动下,它们有望在这些应用中竞争。

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