Temperature effects on high power low on-resistance MOS-bipolar transistor module

摘要

The problem of the temperature dependence of power transistors, under static conditions and switching times, has been addressed. The usual simplified differential equation has been extended to nonlinear analysis. The nonlinear differential equation has been solved, and the prediction compared with the experiments. A novel development of the MOS-bipolar hybrid module concept facilitates the neutralisation of the thermal delays in the turn-off, and simultaneously provides unusually low on-resistance with rugged dV/dt.