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System RAS implications of DRAM soft errors

机译:DRAM软错误对系统RAS的影响

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While attention in the realm of computer design has shifted away from the classic DRAM soft-error rate (SER) and focused instead on SRAM and microprocessor latch sensitivities as sources of potential errors, DRAM SER nonetheless remains a challenging problem. This is true even though both cosmic ray-induced and alpha-particle-induced DRAM soft errors have been well modeled and, to a certain degree, well understood. However, the often-overlooked alignment of a DRAM hard error and a random soft error can have major reliability, availability, and serviceability (RAS) implications for systems that require an extremely long mean time between failures. The net of this effect is that what appears to be a well-behaved, single-bit soft error ends up overwhelming a seemingly state-of-the-art mitigation technique. This paper describes some of the history of DRAM soft-error discovery and the subsequent development of mitigation strategies. It then examines some architectural considerations that can exacerbate the effect of DRAM soft errors and may have system-level implications for today's standard fault-tolerance schemes.
机译:尽管计算机设计领域的注意力已经从传统的DRAM软错误率(SER)转移到了SRAM和微处理器闩锁敏感度上,以作为潜在错误源,但DRAM SER仍然是一个具有挑战性的问题。即使已对宇宙射线诱发的和α粒子诱发的DRAM软错误进行了很好的建模,并且在一定程度上也已得到很好的理解,这是正确的。但是,对于经常需要两次故障之间平均时间很长的系统,经常被忽略的DRAM硬错误和随机软错误的对齐方式可能会对可靠性,可用性和可维护性(RAS)产生重大影响。这种影响的净结果是,似乎是行为良好的单位软错误最终使似乎看似最新的缓解技术不堪重负。本文介绍了DRAM软错误发现的一些历史以及缓解策略的后续发展。然后,它研究了一些架构方面的考虑因素,这些因素可能会加剧DRAM软错误的影响,并且可能对当今的标准容错方案产生系统级的影响。

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