Continuous Microwave Oscillations of Current in GaAs

摘要

Previous work1 has shown that microwave oscillations can be generated by applying a strong electric field to a semiconductor such as n-type GaAs or InP. The results obtained by using extremely short pulses with low duty cycle were sufficiently promising to make it worthwhile, by appropriate thermal design of the specimen, to explore the possibility of obtaining greater average power or longer pulse lengths. This work has now progressed to the point where continuous operation has been obtained at room temperature.